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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2550 DESCRIPTION *High Breakdown VoltageVCBO= 1700V (Min) *High Switching Speed *Low Saturation Voltage *Built-in Damper Diode APPLICATIONS *Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i UNIT 1700 V 600 V 5 V 4 A 8 A 2 A .cn mi e IC Collector Current- Continuous ICM Collector Current- Pulse IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2550 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 1700V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product COB Output Capacitance Switching Times w w w. IF= 4A IC= 0.1A; VCE= 10V IE= 0; VCB= 10V; ftest=1.0MHz sem isc .cn i 8 3 85 66 200 mA 22 2.0 V MHz pF ts Storage Time ICP= 3A, IB1(end)= 0.8A, fH= 15.75kHz 10 s tf Fall Time 0.6 s isc Websitewww.iscsemi.cn 2 |
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